JPH041434B2 - - Google Patents

Info

Publication number
JPH041434B2
JPH041434B2 JP59163508A JP16350884A JPH041434B2 JP H041434 B2 JPH041434 B2 JP H041434B2 JP 59163508 A JP59163508 A JP 59163508A JP 16350884 A JP16350884 A JP 16350884A JP H041434 B2 JPH041434 B2 JP H041434B2
Authority
JP
Japan
Prior art keywords
sense amplifier
bit line
latch circuit
circuit
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59163508A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142794A (ja
Inventor
Takayasu Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59163508A priority Critical patent/JPS6142794A/ja
Priority to KR1019850005080A priority patent/KR890004475B1/ko
Priority to DE8585109699T priority patent/DE3582376D1/de
Priority to US06/761,709 priority patent/US4764901A/en
Priority to EP85109699A priority patent/EP0170285B1/en
Publication of JPS6142794A publication Critical patent/JPS6142794A/ja
Publication of JPH041434B2 publication Critical patent/JPH041434B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
JP59163508A 1984-08-03 1984-08-03 半導体記憶装置のセンスアンプ系 Granted JPS6142794A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59163508A JPS6142794A (ja) 1984-08-03 1984-08-03 半導体記憶装置のセンスアンプ系
KR1019850005080A KR890004475B1 (ko) 1984-08-03 1985-07-16 반도체 장치
DE8585109699T DE3582376D1 (de) 1984-08-03 1985-08-02 Halbleiterspeicheranordnung.
US06/761,709 US4764901A (en) 1984-08-03 1985-08-02 Semiconductor memory device capable of being accessed before completion of data output
EP85109699A EP0170285B1 (en) 1984-08-03 1985-08-02 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59163508A JPS6142794A (ja) 1984-08-03 1984-08-03 半導体記憶装置のセンスアンプ系

Publications (2)

Publication Number Publication Date
JPS6142794A JPS6142794A (ja) 1986-03-01
JPH041434B2 true JPH041434B2 (en]) 1992-01-13

Family

ID=15775195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59163508A Granted JPS6142794A (ja) 1984-08-03 1984-08-03 半導体記憶装置のセンスアンプ系

Country Status (2)

Country Link
JP (1) JPS6142794A (en])
KR (1) KR890004475B1 (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63298797A (ja) * 1987-05-28 1988-12-06 Nec Ic Microcomput Syst Ltd 半導体メモリ
JP2599747B2 (ja) * 1988-03-10 1997-04-16 沖電気工業株式会社 半導体メモリの制御方法
JPH01241093A (ja) * 1988-03-22 1989-09-26 Fujitsu Ltd 半導体記憶装置
JP2552009B2 (ja) * 1989-10-27 1996-11-06 日本電気アイシーマイコンシステム株式会社 半導体メモリ
JPH04119590A (ja) * 1990-09-10 1992-04-21 Fujitsu Ltd 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089891A (ja) * 1983-10-21 1985-05-20 Nec Corp 半導体メモリ

Also Published As

Publication number Publication date
JPS6142794A (ja) 1986-03-01
KR860002156A (ko) 1986-03-26
KR890004475B1 (ko) 1989-11-04

Similar Documents

Publication Publication Date Title
US4608666A (en) Semiconductor memory
JPH0713872B2 (ja) 半導体記憶装置
JPH041955B2 (en])
US5719814A (en) Semiconductor memory device capable of storing high potential level of data
JPH07118193B2 (ja) 半導体記憶装置
US5444652A (en) Semiconductor memory device having a memory cell unit including a plurality of transistors connected in series
EP0791932B1 (en) Semiconductor memory device including main/sub-bit line arrangement
JPS6171494A (ja) 半導体記憶装置
KR950006962B1 (ko) 반도체 기억 장치
JPS6362839B2 (en])
JP2980368B2 (ja) ダイナミック型半導体記憶装置
US5255243A (en) Random access memory device having transfer gate unit for blocking flash write data buffer unit from parasitic capacitance coupled with bit line pairs of memory cells
JPH041434B2 (en])
KR100793671B1 (ko) 반도체 기억 장치 및 프리차지 방법
KR930000768B1 (ko) 반도체 기억장치
JPS5856194B2 (ja) 半導体記憶装置
US5553024A (en) Semiconductor memory utilizing RAS and CAS signals to control the latching of first and second read or write data
JP2795846B2 (ja) 半導体装置
JPH0198188A (ja) 半導体記憶装置
JPH0510756B2 (en])
JP2755615B2 (ja) 半導体記憶装置
JPH0513359B2 (en])
JP2579974B2 (ja) 半導体記憶装置
JPH01138689A (ja) 半導体記憶装置
JPH1139863A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term